QBT-A High Vacuum Plasma-enhanced ALD System

Yunmao Product Overview

The QBT-A system is specially designed for low oxygen containment thin film deposition applications, especially suitable for TiN deposition, such as ultra-low loss RF circuits, TSV filling processes. The unique design minimizes the oxygen content in the process chamber.

Yunmao Technical Advantages

Ultimate Pressure: <5E-8Torr

Plasma: 600W max. RF auto-matching power supply

Max Wafer Size: Ф200mm, AL2O3 Uniformity<1%

Wafer Heating: RT-500±1ºC

Max Precursor: Up to 3 plasma reactive gases and 4 liquid/solid precursor sources

Ozone Generator: Configurable, production rate: 15 g/h

Products category

For Industry

ALD

Plasma Batch ALD

PBATCH Batch PEALD

Thermal Batch ALD

CBATCH 100s Batch Thermal ALD CBATCH 300s Batch Thermal ALD

CVD

MPCVD Diamond CVD

Epitaxy

SICE-Y8 SiC Epitaxy CVD System

Powder ALD/CVD

KG Powder ALD for Mass Production

SCA Powder CVD for Mass Production

For R&D

ALD

Single Wafer ALD

QBT-A
High Vacuum Plasma-enhanced ALD System MINI R&D Desktop ALD

Sputter

Single-Cathode Vertical Sputtering

QBT-P
Dual-chamber Ultra-high Vacuum Magnetron Sputtering System PVD-100
Dual-chamber High Vacuum Magnetron Sputtering System QBT-P L3
Triple-chamber Ultra-high Vacuum Magnetron Sputtering System(α-Ta、Nb-Ta)

Multi-Cathode Vertical Sputtering

QBT-MPV
Multi-target Ultra-high Vacuum Magnetron Vertical Sputtering System

Multi-Cathode Co-Sputtering

QBT-MPC
Multi-target Ultra-high Vacuum Magnetron Co-Sputtering System

MP L Customized Series

QBT-MP·L3
Multi-chamber Ultra-high Vacuum Magnetron Sputtering System

Evaporator

QBT-I Dual-chamber High-speed Evaporator

QBT-J Four-chamber Ultra-high Vacuum GLAD System

QBT-E Dual-chamber Ultra-high Vacuum Electron Beam Evaporator

Powder ALD

GM R&D Powder ALD

QBT-T Dual-chamber Plasma-enhanced Wafer and Powder ALD System

Application

Micro/nano-optoelectronics

Optical Thin Films

FAQ

What processes can QBT-A perform？

Nitride: TiN, SiN, AlN, NbN, etc., Oxide: SiO2, Al2O3, HfO2, TiO2, etc.; Mo, Cu

What is the maximum wafer size that the QBT-A system can process?

Max 8 inch wafer and smaller chips compatible

How low can the room-temperature resistivity of PE-TiN be achieved with the QBT-A system?

The 30nm PE-TiN film achieves a room-temperature resistivity of ≤70 μΩ·cm.

What is the maximum superconducting critical temperature achievable for NbN thin films deposited by the QBT-A system?

20nm NbN, Tc=14K

Related products

MINI R&D Desktop ALD

MINI is a mini easy-to-use desktop ALD system, which can realize controllable atomic layer deposition on 4-inch wafers and micro and nanopowders in high uniformity. It is the the best solution to research and application of advanced energy materials and new nanomaterials.

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QBT-MP·L3 Multi-chamber Ultra-high Vacuum Magnetron Sputtering System

CBATCH 100s Batch Thermal ALD

GM R&D Powder ALD

PVD-100 Dual-chamber High Vacuum Magnetron Sputtering System

QBT-P L3 Triple-chamber Ultra-high Vacuum Magnetron Sputtering System(α-Ta、Nb-Ta)

QBT-MPV Multi-target Ultra-high Vacuum Magnetron Vertical Sputtering System

QBT-MPC Multi-target Ultra-high Vacuum Magnetron Co-Sputtering System