SICE-Y8 SiC Epitaxy CVD System
Product Overview
The SICE-Y6/8 is designed for SiC epitaxial growth on 6- and 8-inch wafers, supporting both P-type and N-type doping. The reaction chamber features a horizontal hot-wall design with five integrated gas inlets and multi-zone gas mixing technology, enabling stable and uniform flow fields. Induction coil heating ensures homogeneous temperature distribution, delivering superior process performance.
Technical Advantages
Patented Independent 5-Channel Gas Inlet Nozzle Design - Enhanced Process Precision
Multiple Gas Mixing Mechanisms for Diverse Process Requirements
Hot-Wall Induction Heating System with Uniform Temperature Field
Fully Automated High-Temperature Wafer Handling Module for Lights-Out Manufacturing
SECS/GEM Connectivity Enables Remote Monitoring & Control
Fully automated platform significantly enhances throughput and stability
