QBT-MP·L3 Multi-chamber Ultra-high Vacuum Magnetron Sputtering System

Yunmao Product Overview

Fabrication of superconducting Ta/TiN/NbN/Al/Nb

Yunmao Technical Advantages

Wafer Heating: RT-900ºC

Pumping Spead: From ATM to 1E-7Torr<20min (loadlock)

Wafer Size: Max 8 inch Wafer and smaller chips compatible

UHV Chamber: 2 UHV Chambers, Loadlock and Sputtering

Ultimate Pressure: <3E-9Torr

Sputtering: DC or RF power supply, wafer and target space can change continoulsly

Wafer Transfer: Highly reliable and repeatable substrate transferring capability

HMI: Fully Automated Human-Machine Interface

Products category

For Industry

ALD

Plasma Batch ALD

PBATCH Batch PEALD

Thermal Batch ALD

CBATCH 100s Batch Thermal ALD CBATCH 300s Batch Thermal ALD

CVD

MPCVD Diamond CVD

Epitaxy

SICE-Y8 SiC Epitaxy CVD System

Powder ALD/CVD

KG Powder ALD for Mass Production

SCA Powder CVD for Mass Production

For R&D

ALD

Single Wafer ALD

QBT-A
High Vacuum Plasma-enhanced ALD System MINI R&D Desktop ALD

Sputter

Single-Cathode Vertical Sputtering

QBT-P
Dual-chamber Ultra-high Vacuum Magnetron Sputtering System PVD-100
Dual-chamber High Vacuum Magnetron Sputtering System QBT-P L3
Triple-chamber Ultra-high Vacuum Magnetron Sputtering System(α-Ta、Nb-Ta)

Multi-Cathode Vertical Sputtering

QBT-MPV
Multi-target Ultra-high Vacuum Magnetron Vertical Sputtering System

Multi-Cathode Co-Sputtering

QBT-MPC
Multi-target Ultra-high Vacuum Magnetron Co-Sputtering System

MP L Customized Series

QBT-MP·L3
Multi-chamber Ultra-high Vacuum Magnetron Sputtering System

Evaporator

QBT-I Dual-chamber High-speed Evaporator

QBT-J Four-chamber Ultra-high Vacuum GLAD System

QBT-E Dual-chamber Ultra-high Vacuum Electron Beam Evaporator

Powder ALD

GM R&D Powder ALD

QBT-T Dual-chamber Plasma-enhanced Wafer and Powder ALD System

Related products

QBT-P Dual-chamber Ultra-high Vacuum Magnetron Sputtering System

QBT-P enables high-quality thin-film deposition and can grow high-purity α-phase tantalum films at both high and room temperatures. It deposited α-Ta films exhibit superior superconducting properties with Tc > 4.25 K and residual resistance ratio > 6, enabling low-loss quantum circuits that achieve single-photon Q > 10⁶ and qubit coherence times exceeding 250 μs.

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QBT-P Dual-chamber Ultra-high Vacuum Magnetron Sputtering System

QBT-MP·L3 Multi-chamber Ultra-high Vacuum Magnetron Sputtering System

CBATCH 100s Batch Thermal ALD

GM R&D Powder ALD

PVD-100 Dual-chamber High Vacuum Magnetron Sputtering System

QBT-P L3 Triple-chamber Ultra-high Vacuum Magnetron Sputtering System(α-Ta、Nb-Ta)

QBT-MPV Multi-target Ultra-high Vacuum Magnetron Vertical Sputtering System

QBT-MPC Multi-target Ultra-high Vacuum Magnetron Co-Sputtering System

QBT-I Dual-chamber High-speed Evaporator

KG Powder ALD for Mass Production

SCA Powder CVD for Mass Production

QBT-A High Vacuum Plasma-enhanced ALD System

QBT-J Four-chamber Ultra-high Vacuum GLAD System

QBT-E Dual-chamber Ultra-high Vacuum Electron Beam Evaporator

PBATCH Batch PEALD

SICE-Y8 SiC Epitaxy CVD System

QBT-T Dual-chamber Plasma-enhanced Wafer and Powder ALD System

MINI R&D Desktop ALD

CBATCH 300s Batch Thermal ALD

MPCVD Diamond CVD

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